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 HZ(H) Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0181-0100Z (Previous: ADE-208-794) Rev.1.00 Mar.11.2004
Features
* Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. * Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.
Ordering Information
Type No. HZ(H) Series Mark Type No. Package Code DO-35
Pin Arrangement
1
7 B2
2
Type No. Cathode band 1. Cathode 2. Anode
Rev.1.00, Mar.11.2004, page 1 of 6
HZ(H) Series
Absolute Maximum Ratings
(Ta = 25C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 500 175 -55 to +175 Unit mW C C
Electrical Characteristics
(Ta = 25C) Zener Voltage VZ (V)* Type HZ2(H) Grade B1 B2 B3 C1 C2 HZ3(H) C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ4(H) A1 A2 A3 B1 B2 B3 C1 C2 HZ5(H) C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 Note: Min 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1
1
Reverse Current Test Condition IR (A) Max 5 Test Condition VR (V) 0.5
Dynamic Resistance rd () Max 100 Test Condition IZ (mA) 5
Max 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3
IZ (mA) 5
5
5
0.5
100
5
5
5
1.0
100
5
5
5
1.5
100
5
1. Tested with DC.
Rev.1.00, Mar.11.2004, page 2 of 6
HZ(H) Series
(Ta = 25C) Zener Voltage VZ (V)* Type HZ6(H) Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8
1
Reverse Current Test Condition IR (A) Max 5 Test Condition VR (V) 2.0
Dynamic Resistance rd () Max 40 Test Condition IZ (mA) 5
Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3
IZ (mA) 5
HZ7(H)
5
1
3.5
15
5
HZ9(H)
5
1
5.0
20
5
HZ11(H)
5
1
7.5
25
5
HZ12(H)
5
1
9.5
35
5
Note:
1. Tested with DC.
Rev.1.00, Mar.11.2004, page 3 of 6
HZ(H) Series
(Ta = 25C) Zener Voltage VZ (V)* Type HZ15(H) Grade 1 2 3 HZ16(H) 1 2 3 1 2 3 HZ20(H) 1 2 3 1 2 3 HZ24(H) 1 2 3 1 2 3 HZ30(H) 1 2 3 1 2 3 HZ36(H) 1 2 3 Min 14.1 14.5 14.9 15.3 15.7 16.3 16.9 17.5 18.1 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 25.2 26.2 27.2 28.2 29.2 30.2 31.2 32.2 33.2 34.2 35.3 36.4
1
Reverse Current Test Condition IR (A) Max 1 Test Condition VR (V) 11.0
Dynamic Resistance rd () Max 40 Test Condition IZ (mA) 5
Max 14.7 15.1 15.5 15.9 16.5 17.1 17.7 18.3 19.0 19.7 20.4 21.1 21.9 22.6 23.3 24.0 24.7 25.5 26.6 27.6 28.6 29.6 30.6 31.6 32.6 33.6 34.6 35.7 36.8 38.0
IZ (mA) 5
5
1
12.0
45
5
HZ18(H)
5
1
13.0
55
5
2
1
15.0
60
2
HZ22(H)
2
1
17.0
65
2
2
1
19.0
70
2
HZ27(H)
2
1
21.0
80
2
2
1
23.0
100
2
HZ33(H)
2
1
25.0
120
2
2
1
27.0
140
2
Notes: 1. Tested with DC. 2. Type No. is as follows; HZ2(H)B1, HZ 2(H)B2, HZ36(H)3.
Rev.1.00, Mar.11.2004, page 4 of 6
HZ(H) Series
Main Characteristic
10-2
HZ16 H
HZ12 H
HZ20 H
HZ24 H
10-3
Zener Current IZ (A)
10-4 10-5 10-6 10-7 10-8
0
HZ2 H HZ4 H HZ6 H
5
10
15
20
25
HZ30 H
30
35
HZ36 H
HZ9 H
40
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
Zener Voltage Temperature Coefficient Z (mV/C)
Zener Voltage Temperature Coefficient Z (%/C)
0.10 0.08 0.06 0.04 mV/C 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 5 %/C
50 40 30 20 10 0 -10 -20 -30 -40 -50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
500
5mm 2.5 mm 3 mm
Power Dissipation Pd (mW)
400
Printed circuit board 100 x180 x1.6t mm Material: paper phenol
300
200
100
0 0 50 100 150 200 Ambient Temperature Ta (C) Fig.3 Power Dissipation vs. Ambient Temperature
Fig.2 Temperature Coefficient vs. Zener voltage
Rev.1.00, Mar.11.2004, page 5 of 6
HZ(H) Series
Package Dimensions
As of January, 2003
Unit: mm
26.0 Min
4.2 Max
26.0 Min
0.5
2.0
Package Code JEDEC JEITA Mass (reference value)
DO-35 Conforms Conforms 0.13 g
Rev.1.00, Mar.11.2004, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
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